Methodology for Electrical Characterization of MOS Devices with Alternative Gate Dielectrics
Aggressive scaling of Complementary Metal Oxide Semiconductor (CMOS) devices is driving SiO2 based gate dielectrics to its physical limits. Currently several alternative dielectric materials are being studied extensively as replacement for SiO2. This work mainly discusses charge trapping and the die...
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https://tuprints.ulb.tu-darmstadt.de/404/1/Thesis_AK_part_1.pdfhttps://tuprints.ulb.tu-darmstadt.de/404/2/Thesis_AK_part_2.pdf
https://tuprints.ulb.tu-darmstadt.de/404/3/Thesis_AK_part_3.pdf
Kerber, Andreas <http://tuprints.ulb.tu-darmstadt.de/view/person/Kerber=3AAndreas=3A=3A.html> (2004): Methodology for Electrical Characterization of MOS Devices with Alternative Gate Dielectrics.Darmstadt, Technische Universität, [Online-Edition: http://elib.tu-darmstadt.de/diss/000404 <http://elib.tu-darmstadt.de/diss/000404> <official_url>],[Ph.D. Thesis]