IMPROVEMENT OF SILICON OXIDE QUALITY USING HEAT TREATMENT
In decades, the tremendous development of integrated circuits industry could be mostly attributed to SiO2, since its satisfactory properties as a gate dielectric candidate. The effectivity of SiO2 has been challenged since dielectric layer was scaled down below 3nm, when the gate leakage current of...
| Main Author: | |
|---|---|
| Format: | Others |
| Published: |
UKnowledge
2012
|
| Subjects: | |
| Online Access: | http://uknowledge.uky.edu/ece_etds/5 http://uknowledge.uky.edu/cgi/viewcontent.cgi?article=1004&context=ece_etds |