Investigation of Gate Dielectric Materials and Dielectric/Silicon Interfaces for Metal Oxide Semiconductor Devices
The progress of the silicon-based complementary-metal-oxide-semiconductor (CMOS) technology is mainly contributed to the scaling of the individual component. After decades of development, the scaling trend is approaching to its limitation, and there is urgent needs for the innovations of the materia...
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| Format: | Others |
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UKnowledge
2015
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| Online Access: | http://uknowledge.uky.edu/ece_etds/69 http://uknowledge.uky.edu/cgi/viewcontent.cgi?article=1070&context=ece_etds |