Optical spectroscopy on silicon vacancy defects in silicon carbide
This work sheds light on different aspects of the silicon vacancy in SiC: (1) Defect creation via irradiation is shown both with electrons and neutrons. Optical properties have been determined: the excitation of the vacancy is most efficient at excitation wavelengths between 720nm and 800nm. The PL...
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| Format: | Doctoral Thesis |
| Language: | English |
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2015
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| Online Access: | https://opus.bibliothek.uni-wuerzburg.de/frontdoor/index/index/docId/12407 http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-124071 https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-124071 https://opus.bibliothek.uni-wuerzburg.de/files/12407/Dissertation_Fuchs_Franziska.pdf |