Analysis of charge-transport properties in GST materials for next generation phase-change memory devices
The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. The memory subsystem accounts for a significant cost and power budget of a computer system. Current DRAM-based main memory sy...
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| Format: | Doctoral Thesis |
| Language: | en |
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Alma Mater Studiorum - Università di Bologna
2013
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| Online Access: | http://amsdottorato.unibo.it/5583/ |