Giovanardi, F. <., & Rudan, M. (2013). Analysis of charge-transport properties in GST materials for next generation phase-change memory devices. Alma Mater Studiorum - Università di Bologna.
Chicago Style (17th ed.) CitationGiovanardi, Fabio <1984>, and Massimo Rudan. Analysis of Charge-transport Properties in GST Materials for Next Generation Phase-change Memory Devices. Alma Mater Studiorum - Università di Bologna, 2013.
MLA (8th ed.) CitationGiovanardi, Fabio <1984>, and Massimo Rudan. Analysis of Charge-transport Properties in GST Materials for Next Generation Phase-change Memory Devices. Alma Mater Studiorum - Università di Bologna, 2013.
Warning: These citations may not always be 100% accurate.