Adhesion/Diffusion Barrier Layers for Copper Integration: Carbon-Silicon Polymer Films and Tantalum Substrates
The Semiconductor Industry Association (SIA) has identified the integration of copper (Cu) with low-dielectric-constant (low-k) materials as a critical goal for future interconnect architectures. A fundamental understanding of the chemical interaction of Cu with various substrates, including diffusi...
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| Format: | Others |
| Language: | English |
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University of North Texas
1999
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| Online Access: | https://digital.library.unt.edu/ark:/67531/metadc2255/ |