The Stopping of Energetic Si, P and S Ions in Ni, Cu, Ge and GaAs Targets
Accurate knowledge of stopping powers is essential for these for quantitative analysis and surface characterization of thin films using ion beam analysis (IBA). These values are also of interest in radiobiology and radiotherapy, and in ion- implantation technology where shrinking feature sizes puts...
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| Format: | Others |
| Language: | English |
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University of North Texas
2001
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| Online Access: | https://digital.library.unt.edu/ark:/67531/metadc3004/ |