Evaluation of hydrogen trapping in HfO2 high-κ dielectric thin films.
Hafnium based high-κ dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in complementary metal oxide semiconductor (CMOS) devices. Hydrogen is one of the most significant elements in semiconductor technology because of its pervasiveness in various depositi...
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| Language: | English |
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University of North Texas
2006
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| Online Access: | https://digital.library.unt.edu/ark:/67531/metadc5596/ |