Interfacial Studies of Bimetallic Corrosion in Copper/Ruthenium Systems and Silicon Surface Modification with Organic and Organometallic Chemistry
To form Cu interconnects, dual-damascene techniques like chemical mechanical planarization (CMP) and post-CMP became inevitable for removing the "overburden" Cu and for planarizing the wafer surface. During the CMP processing, Cu interconnects and barrier metal layers experience different...
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| Format: | Others |
| Language: | English |
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University of North Texas
2006
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| Online Access: | https://digital.library.unt.edu/ark:/67531/metadc5600/ |