The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates
Graphene has attracted significant research attention for next generation of semiconductor devices due to its high electron mobility and compatibility with planar semiconductor processing. In this dissertation, the influences of Ohmic metals and high dielectric (high-k) constant aluminum oxide (Al2O...
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| Format: | Others |
| Language: | English |
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University of North Texas
2011
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| Online Access: | https://digital.library.unt.edu/ark:/67531/metadc68009/ |