Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth
The growth of single and multilayer BN films on several substrates was investigated. A typical atomic layer deposition (ALD) process was demonstrated on Si(111) substrate with a growth rate of 1.1 Å/cycle which showed good agreement with the literature value and a near stoichiometric B/N ratio. Boro...
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| Format: | Others |
| Language: | English |
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University of North Texas
2011
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| Online Access: | https://digital.library.unt.edu/ark:/67531/metadc84305/ |