Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth
The growth of single and multilayer BN films on several substrates was investigated. A typical atomic layer deposition (ALD) process was demonstrated on Si(111) substrate with a growth rate of 1.1 Å/cycle which showed good agreement with the literature value and a near stoichiometric B/N ratio. Boro...
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ndltd-unt.edu-info-ark-67531-metadc843052020-07-15T07:09:31Z Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth Zhou, Mi Atomic layer deposition boron nitride grapheme ALD The growth of single and multilayer BN films on several substrates was investigated. A typical atomic layer deposition (ALD) process was demonstrated on Si(111) substrate with a growth rate of 1.1 Å/cycle which showed good agreement with the literature value and a near stoichiometric B/N ratio. Boron nitride films were also deposited by ALD on Cu poly crystal and Cu(111) single crystal substrates for the first time, and a growth rate of ~1ML/ALD cycle was obtained with a B/N ratio of ~2. The realization of a h-BN/Cu heterojunction was the first step towards a graphene/h-BN/Cu structure which has potential application in gateable interconnects. University of North Texas Kelber, Jeffery A. Cooke, Stephen A. 2011-08 Thesis or Dissertation Text local-cont-no: zhou_mi https://digital.library.unt.edu/ark:/67531/metadc84305/ ark: ark:/67531/metadc84305 English Public Zhou, Mi Copyright Copyright is held by the author, unless otherwise noted. All rights reserved. |
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English |
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Others
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Atomic layer deposition boron nitride grapheme ALD |
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Atomic layer deposition boron nitride grapheme ALD Zhou, Mi Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth |
description |
The growth of single and multilayer BN films on several substrates was investigated. A typical atomic layer deposition (ALD) process was demonstrated on Si(111) substrate with a growth rate of 1.1 Å/cycle which showed good agreement with the literature value and a near stoichiometric B/N ratio. Boron nitride films were also deposited by ALD on Cu poly crystal and Cu(111) single crystal substrates for the first time, and a growth rate of ~1ML/ALD cycle was obtained with a B/N ratio of ~2. The realization of a h-BN/Cu heterojunction was the first step towards a graphene/h-BN/Cu structure which has potential application in gateable interconnects. |
author2 |
Kelber, Jeffery A. |
author_facet |
Kelber, Jeffery A. Zhou, Mi |
author |
Zhou, Mi |
author_sort |
Zhou, Mi |
title |
Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth |
title_short |
Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth |
title_full |
Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth |
title_fullStr |
Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth |
title_full_unstemmed |
Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth |
title_sort |
boron nitride by atomic layer deposition: a template for graphene growth |
publisher |
University of North Texas |
publishDate |
2011 |
url |
https://digital.library.unt.edu/ark:/67531/metadc84305/ |
work_keys_str_mv |
AT zhoumi boronnitridebyatomiclayerdepositionatemplateforgraphenegrowth |
_version_ |
1719329124422516736 |