AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates
GaN-based HFETs demonstrate ubiquitous high power and high frequency performance and attract tremendous research efforts. Even though significant advances have been achieved, there still exist some critical issues needed to be investigated and solved. In particular, high defect densities due to inh...
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| Format: | Others |
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VCU Scholars Compass
2012
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| Online Access: | http://scholarscompass.vcu.edu/etd/403 http://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=1402&context=etd |