A Study on the Nature of Anomalous Current Conduction in Gallium Nitride

A Study on the Nature of Anomalous Current Conduction in Gallium Nitride

Current leakage in GaN thin films limits reliable device fabrication. A variety of Ga and N rich MBE GaN thin films grown by Rf, NH3, and Rf+ NH3, are examined with electrical measurements on NiIAu Schottky diodes and CAFM. Current-voltage (IV) mechanisms will identify conduction mechanisms on diode...

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Bibliographic Details
Main Author: Spradlin, Joshua K.
Format: Others
Published: VCU Scholars Compass 2005
Subjects:
photoluminescence
SEM
DLTS
CAFM
mobility
KOH etching
MODFET
resistivity
III-Nitride
III-V
Hall measurements
silvaco
schottky diode
illumination
polarization
MBE
MOCVD
HVPE
semiconductor
Electrical and Computer Engineering
Engineering
Online Access:http://scholarscompass.vcu.edu/etd/709
http://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=1708&context=etd

Internet

http://scholarscompass.vcu.edu/etd/709
http://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=1708&context=etd

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