DEFECTS IN GaN: AN EXPERIMENTAL STUDY
This work examines extended, point, and surface defects in GaN by means of electric force microscopy, photoluminescence and deep-level transient spectroscopy. Modeling of the surface band bending, its origin, and the effects of fabrication processing steps are discussed in the first part of the diss...
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| Format: | Others |
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VCU Scholars Compass
2007
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| Online Access: | http://scholarscompass.vcu.edu/etd_retro/72 http://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=1071&context=etd_retro |