Growth of α-Sn on silicon by a reversed β-Sn to α-Sn phase transformation for quantum material integration

Growth of α-Sn on silicon by a reversed β-Sn to α-Sn phase transformation for quantum material integration

α-Sn and SnGe alloys are attracting attention as a new family of topological quantum materials. However, bulk α-Sn is thermodynamically stable only below 13∘C. Moreover, scalable integration of α-Sn quantum materials and devices on silicon is hindered by their large lattice mismatch. Here, we grow c...

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Bibliographic Details
Main Authors: Akey, A. (Author), Covian, A.C (Author), Gardener, J.A (Author), Levin, B.D.A (Author), Liu, J. (Author), Liu, S. (Author), Wang, X. (Author)
Format: Article
Language:English
Published: Springer Nature 2022
Subjects:
Deposited materials
Germanium
Germaniums (Ge)
Integration
Large lattice mismatch
Lattice mismatch
Native oxides
Oxide layer
Phase transitions
Phases transformation
Semiconductor alloys
Si-Ge alloys
Silicon
Silicon substrates
Sn-doped
Thermodynamically stable
Tin alloys
Topology
β-Sn
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