Metal-semiconductor-metal Photodetectors on a GeSn-on-insulator Platform for 2 m Applications
In this work, the metal-semiconductor-metal photodetectors were demonstrated on the Ge0.91Sn0.09-on-insulator (GeSnOI) platform. The responsivity was 0.24 and 0.06 A/W at wavelengths of 1,600 and 2,003 nm, respectively. Through a systematic study, it is revealed that the photodetectors can potential...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Institute of Electrical and Electronics Engineers Inc.
2022
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Subjects: | |
Online Access: | View Fulltext in Publisher |