Thermal stability of electrical parameters of silicon crystal doped with nickel during growth
This work shows that the introduction of nickel atoms in the process of growing silicon crystals enables to obtain a material with stable electrophysical parameters during thermal annealing in the wide temperature range 450…1050 °С and duration (t = 0.5…25 hours). This is the most cost-effective way...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
National Academy of Sciences of Ukraine - Institute of Semiconductor Physics
2022
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| Subjects: | |
| Online Access: | View Fulltext in Publisher |