Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy

Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy

Schottky barrier diodes on GaN on GaN substrates are fabricated for the purpose of material and technology characterization. The epitaxial layers are grown by MOCVD. I–V measurements as a function of the temperature in the range 80–480 K show ideality factor (n) and barrier height (ϕB) variations no...

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Bibliographic Details
Main Authors: Bluet, J.-M (Author), Brémond, G. (Author), Buckley, J. (Author), Charles, M. (Author), Cordier, Y. (Author), Dagher, M. (Author), Frayssinet, E. (Author), Haas, H. (Author), Iretki, M.R (Author), Maurya, V. (Author), Planson, D. (Author), Sonneville, C. (Author)
Format: Article
Language:English
Published: John Wiley and Sons Inc 2023
Subjects:
Barrier heights
Deep level transient spectroscopy
Deep levels transient spectroscopy
deep-level transient spectroscopy
Diodes
Electrical behaviors
Gallium nitride
GaN homoepitaxy
GaN substrate
Homoepitaxy
III-V semiconductors
I-V measurements
Mapping
Materials and technologies
Platinum compounds
Raman spectroscopy
Schottky barrier diodes
Schottky diodes
Standard deviation
Statistics
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