Study of impact ionization effect on power RF N-LDMOS transistor after thermal pulsed RF life test

Study of impact ionization effect on power RF N-LDMOS transistor after thermal pulsed RF life test

This paper focuses on exploring the correlation between electrical parameters shift of a power RF N-LDMOS transistor and the failure phenomenon that appeared after the conditioning of the pulsed RF life tests (1500 h). Investigational tests are first carried out in real-time using a test bench circu...

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Bibliographic Details
Main Author: Belaïd, M.A (Author)
Format: Article
Language:English
Published: Elsevier Ltd 2022
Subjects:
Carrier concentration
Degradation
Electric breakdown
Electric lines
Electrical parameter
Impact ionization
Interface states
Ionization effect
LDMOS transistors
Life-tests
MOS devices
Parameter shifts
Power
Power RF LDMOS
Radar circuits
RF-LDMOS
Scattering parameters
Silica
Silicon oxides
Temperature
Temperature effects
Thermal
Thermal RF life-test
Thermal RF life-Test
Threshold voltage
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