Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)
In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures were successfully created using technique known as plasma-assisted molecular beam epitaxy (MBE) on silicon substrate. Gallium (...
Main Authors: | Che Abdullah, C.A (Author), Hassan, Z. (Author), Mahyuddin, A. (Author), Mohd Yusoff, M.Z (Author), Xin Jing, H. (Author) |
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Format: | Article |
Language: | English |
Published: |
Elsevier B.V.
2019
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Subjects: | |
Online Access: | View Fulltext in Publisher |
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