Effect of electrode and oxide properties on the filament kinetics during electroforming in metal-oxide-based memories
We developed a physical model to fundamentally understand the conductive filament (CF) formation and growth behavior in the switching layer during electroforming process in the metal-oxide-based resistive random-access memories (RRAM). The effects of the electrode and oxide layer properties on the C...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Research
2022
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| Subjects: | |
| Online Access: | View Fulltext in Publisher |