Effect of electrode and oxide properties on the filament kinetics during electroforming in metal-oxide-based memories
We developed a physical model to fundamentally understand the conductive filament (CF) formation and growth behavior in the switching layer during electroforming process in the metal-oxide-based resistive random-access memories (RRAM). The effects of the electrode and oxide layer properties on the C...
Main Authors: | Cao, Y. (Author), Ganesh, P. (Author), Ren, Y. (Author), Zhang, K. (Author) |
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Format: | Article |
Language: | English |
Published: |
Nature Research
2022
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Subjects: | |
Online Access: | View Fulltext in Publisher |
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