Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate

Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate

The threshold voltage of a field-effect transistor (FET) determines its switching and limits the scaling of the supply voltage in the logic gates. Here we demonstrate a GaAs FET with a monolayer graphene gate in which the threshold voltage was externally controlled by an additional control gate. The...

Full description

Bibliographic Details
Main Authors: Anzi, L. (Author), Fedorov, A. (Author), Sanguinetti, S. (Author), Sordan, R. (Author), Tuktamyshev, A. (Author), Zurutuza, A. (Author)
Format: Article
Language:English
Published: Nature Research 2022
Subjects:
A: semiconductors
Additional control
Channel conductivity
Computer circuits
Control gates
Field effect transistors
Field-effect transistor
Gallium arsenide
Graphene
Graphene transistors
III-V semiconductors
Logic gates
Scalings
Schottky barrier diodes
Schottky junctions
Semiconductor field-effect transistors
Supply voltages
Threshold voltage
Transistor channels
Online Access:View Fulltext in Publisher

Internet

View Fulltext in Publisher

Similar Items