Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors

• Main Authors: Gao, P. (Author), Han, K. (Author), Huang, K. (Author), Renshaw Wang, X. (Author), Wen, W. (Author), Xiong, Q. (Author), Xu, J. (Author), Yang, A.J (Author), Ye, C. (Author), Yu, T. (Author), Zhu, R. (Author)
• Format: Article
• Language: English
• Published: Nature Research 2022
• Subjects: Channel length; High quality; High-κ; Layered semiconductors; Molybdenum compounds; Perovskite; Perovskite oxides; P-type; Sacrificial layer; Selenium compounds; Single crystals; Strontium titanates; Sulfur compounds; Thin-films; Transistors; Tungsten compounds; Two-dimensional semiconductors; Van der Waal; Van der waals' forces; Van der Waals forces
• Online Access: View Fulltext in Publisher

 Two-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, semiconductors need to be integrated with high-quality dielectrics—which are challenging to deposit. Here we show that single-crystal strontium titanate—a high-κ perovskite oxide—can be integrated with two-dimensional semiconductors using van der Waals forces. Strontium titanate thin films are grown on a sacrificial layer, lifted off and then transferred onto molybdenum disulfide and tungsten diselenide to make n-type and p-type transistors, respectively. The molybdenum disulfide transistors exhibit an on/off current ratio of 108 at a supply voltage of 1 V and a minimum subthreshold swing of 66 mV dec−1. We also show that the devices can be used to create low-power complementary metal–oxide–semiconductor inverter circuits. © 2022, The Author(s).