Junction engineering in two-stepped recessed SiGe MOSFETs for high performance application

Junction engineering in two-stepped recessed SiGe MOSFETs for high performance application

SiGe being one of the most diverse, emerging and richest material for MOSFETs is alluring the scientist due to its unique characteristics like high performance, high surface channel mobility and low threshold voltage as compare to that of silicon MOSFETs. In spite of so much cruciality, the performa...

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Main Authors: Aris H.B (Author), Chowdhury, Z.Z (Author), Hambali N.A.M.A (Author), Hamizi, N.A (Author), Hussin, H. (Author), Jambek A.B (Author), Johan, M.R (Author), Johari S. (Author), Naseer, M.N (Author), Osman R.A.M (Author), Osman, R.A.M (Author), Othman N. (Author), Pivehzhani, O.A (Author), Sabapathy, T. (Author), Sagadevan, S. (Author), Soin, N. (Author), Wahab, Y.A (Author), Wahid M.H.A (Author)
Format: Article
Language:English
Published: American Institute of Physics Inc., 2020
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