Junction engineering in two-stepped recessed SiGe MOSFETs for high performance application
SiGe being one of the most diverse, emerging and richest material for MOSFETs is alluring the scientist due to its unique characteristics like high performance, high surface channel mobility and low threshold voltage as compare to that of silicon MOSFETs. In spite of so much cruciality, the performa...
Main Authors: | , , , , , , , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
American Institute of Physics Inc.,
2020
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Online Access: | View Fulltext in Publisher View in Scopus |