Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors

Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors

The electrical and structural characteristics of 50-nm-thick zinc oxide (ZnO) metal-semiconductor-metal ultraviolet (UV) photodetectors subjected to proton irradiation at different temperatures are reported and compared. The devices were irradiated with 200 keV protons to a fluence of 1016 cm -2. Ex...

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Bibliographic Details
Main Authors: Chapin, C.A (Author), Heuser, T.A (Author), Holliday, M.A (Author), Senesky, D.G (Author), Wang, Y. (Author)
Format: Article
Language:English
Published: American Institute of Physics Inc. 2022
Subjects:
Activation energy
Control samples
Crystal orientation
Electrical characteristic
Fluences
II-VI semiconductors
Irradiation temperature
Magnetic semiconductors
Metals
Metal-semiconductor-metal
Oxide semiconductors
Persistent Photoconductivity
Photoconductivity
Photocurrents
Photodetectors
Photons
Proton irradiation
Protons irradiations
Raman scattering
Rocking curves
Structural characteristics
Ultra-violet photodetectors
Wide band gap semiconductors
X ray diffraction
Zinc oxide
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