Multi-ion scattering of charged carriers by ionized impurities in heavily doped semiconductors: From bulk to nanowires

Multi-ion scattering of charged carriers by ionized impurities in heavily doped semiconductors: From bulk to nanowires

Analytical expressions for the low-field mobility in heavily doped 3D, 2D, and 1D semiconductor structures are obtained using the quantum-kinetic approach. The study takes into account the multi-ion (M-ion) scattering of charge carriers by ionized impurities. The calculated dependences of the carrie...

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Bibliographic Details
Main Authors: Kovalenko, K.L (Author), Kozlovskiy, S.I (Author), Sharan, N.N (Author), Venger, E.F (Author)
Format: Article
Language:English
Published: American Institute of Physics Inc. 2022
Subjects:
Analytical expressions
Carrier concentration
Carrier mobility
Charged carriers
Doped semiconductors
Effective mass
Electrons
Gallium arsenide
Heavily doped
III-V semiconductors
Impurities in
Indium phosphide
Ion scattering
Ionization
Ionized impurities
Ions
Low field mobility
Nanowires
Semiconducting indium phosphide
Semiconductor alloys
Semiconductor doping
Semiconductor structure
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