Conduction mechanisms of ferroelectric La:HfO2ultrathin films

Conduction mechanisms of ferroelectric La:HfO2ultrathin films

Recently, ion-doped HfO2 thin films are highly desirable for the next-generation nonvolatile memories due to excellent compatibility with current complementary metal-oxide-semiconductor processes and robust ferroelectricity persisted down to the nanoscale. In this work, we study conduction mechanism...

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Bibliographic Details
Main Authors: Chen, F. (Author), Ding, C. (Author), Lu, C. (Author), Lu, L. (Author), Tang, M. (Author), Wang, S. (Author), Wen, Z. (Author), Xu, J. (Author), Xu, Z. (Author), Yu, Y. (Author), Zheng, W. (Author)
Format: Article
Language:English
Published: American Institute of Physics Inc. 2022
Subjects:
Band alignments
CMOS integrated circuits
Complementary metal oxide semiconductor process
Conduction Mechanism
'current
Current voltage curve
Ferroelectric films
Ferroelectricity
Hafnium oxides
Lanthanum compounds
Manganese oxide
Metals
MOS devices
Nano scale
Nonvolatile memory
Non-volatile memory
Oxide semiconductors
Strontium compounds
Temperature dependent
Thin-films
Ultrathin films
X ray photoelectron spectroscopy
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