Microscopic origins of anisotropy for the epitaxial growth of 3C-SiC (0001) vicinal surface: A kinetic Monte Carlo study

In order to investigate the microscopic evolution of the step flow growth process and reveal the microscopic origins of crystalline anisotropy during the epitaxial growth of 3C-SiC (0001) vicinal surface, a three-dimensional Kinetic Monte Carlo model is established, in which Si and C are considered...

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Bibliographic Details
Main Authors: Ai, W. (Author), Chen, X. (Author), Feng, J. (Author)
Format: Article
Language:English
Published: American Institute of Physics Inc. 2022
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