Elastic behavior of metal-assisted etched Si/SiGe superlattice nanowires containing dislocations

Elastic behavior of metal-assisted etched Si/SiGe superlattice nanowires containing dislocations

We systematically investigate structural parameters, such as shape, size, elastic strain, and relaxations, of metal-assisted etched vertically modulated Si/SiGe superlattice nanowires by using electron microscopy, synchrotron-based x-ray diffraction, and numerical linear elasticity theory. A vertica...

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Bibliographic Details
Main Authors: Buczek, N. (Author), Buczek, P. (Author), Dubslaff, M. (Author), Fuhrmann, B. (Author), Hanke, M. (Author), Leipner, H.S (Author), Tonkikh, A.A (Author)
Format: Article
Language:English
Published: American Institute of Physics Inc. 2022
Subjects:
Atomically flat interfaces
Elastic behavior
Elastic relaxation
Elastic-strains
Etching
Lattice constants
Lattice mismatch
Linear elasticity theory
Molecular beam epitaxy
Nano-structuring
Nanowires
Si/Ge superlattices
Si/SiGe
Structural parameter
Substrates
Superlattice nanowires
Thermoelectric equipment
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