Recrystallization of thick implanted GeSn layers with nanosecond laser annealing
We investigate the recrystallization of thick phosphorus-implanted GeSn layers using 308 nm Ultraviolet Nanosecond Laser Annealing (UV-NLA). We identify the optimal annealing conditions leading to the reconstruction of Ge0.92Sn0.08 crystal amorphized by dopant implantation. The fully recrystallized...
Main Authors: | , , , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
American Institute of Physics Inc.
2022
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Subjects: | |
Online Access: | View Fulltext in Publisher |