Recrystallization of thick implanted GeSn layers with nanosecond laser annealing

Recrystallization of thick implanted GeSn layers with nanosecond laser annealing

We investigate the recrystallization of thick phosphorus-implanted GeSn layers using 308 nm Ultraviolet Nanosecond Laser Annealing (UV-NLA). We identify the optimal annealing conditions leading to the reconstruction of Ge0.92Sn0.08 crystal amorphized by dopant implantation. The fully recrystallized...

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Bibliographic Details
Main Authors: Acosta Alba, P. (Author), Bernier, N. (Author), Bertrand, M. (Author), Calvo, V. (Author), Casiez, L. (Author), Chelnokov, A. (Author), Chrétien, J. (Author), Frauenrath, M. (Author), Hartmann, J.M (Author), Mazen, F. (Author), Pauc, N. (Author), Reboud, V. (Author), Richy, J. (Author), Rouchon, D. (Author)
Format: Article
Language:English
Published: American Institute of Physics Inc. 2022
Subjects:
Annealing
Annealing condition
Dopant implantation
Germanium alloys
Laser-annealing
Localised
matrix
Nanosecond lasers
Optimal annealing
Photonic devices
Recrystallisation
Recrystallization (metallurgy)
Semiconductor alloys
Strain variation
Sub-layers
Tin
Tin alloys
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