N2, NO, and O2molecules in LiGaO2in both Ga and Li sites and their relation to the vacancies
Doping of the ultrawide bandgap semiconductor LiGaO 2 (E g = 5.6 eV) with N 2, NO, and O 2 molecules placed in either Ga or Li vacancies is studied using first-principles calculations. These molecular dopants are considered potential acceptors for p-type doping. Their optimal placement and orientati...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics Inc.
2022
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| Subjects: | |
| Online Access: | View Fulltext in Publisher |