High-frequency traveling-wave phononic cavity with sub-micron wavelength

High-frequency traveling-wave phononic cavity with sub-micron wavelength

Thin-film gallium nitride (GaN) is a promising platform for phononic integrated circuits that hold great potential for scalable information processing processors. Here, an unsuspended traveling phononic resonator based on a high-acoustic-index-contrast mechanism is realized in GaN-on-Sapphire with a...

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Bibliographic Details
Main Authors: Dong, C.-H (Author), Guo, G.-C (Author), Sun, L. (Author), Wang, B.-Z (Author), Wang, J.-Q (Author), Wang, W. (Author), Xu, X.-B (Author), Yang, Y.-H (Author), Zhang, Y.-L (Author), Zou, C.-L (Author)
Format: Article
Language:English
Published: American Institute of Physics Inc. 2022
Subjects:
Acoustic resonators
Contrast mechanism
Frequency quality
Gallium nitride
High frequency HF
III-V semiconductors
Index contrasts
Quality factors
Sapphire
Submicron
Superconducting films
Superconducting qubits
Temperature decrease
Thin-films
Travelling waves
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