Persistent photoconductivity in a-IGZO thin films induced by trapped electrons and metastable donors
Amorphous In-Ga-Zn-O (a-IGZO) thin films are prepared by pulsed laser deposition and fabricated into thin film transistors (TFTs). The concentration of oxygen vacancies in a-IGZO thin films is determined by the deposition oxygen pressure, as characterized by in situ x-ray photoelectron spectroscopy....
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics Inc.
2022
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| Subjects: | |
| Online Access: | View Fulltext in Publisher |