Single β -Ga2O3nanowire based lateral FinFET on Si

A fin field-effect transistor (FinFET) based on single β-Ga2O3 nanowire with a diameter of ∼60 nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of ∼4 × 108, a system-limit l...

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Bibliographic Details
Main Authors:	Jia, C. (Author), Lee, Y.J (Author), Li, J. (Author), Liu, L. (Author), Ma, Y. (Author), Park, J.-H (Author), Qu, G. (Author), Wang, G. (Author), Wang, Y. (Author), Wu, S. (Author), Xu, S. (Author), Yi, X. (Author), Zhang, X. (Author), Zhang, Y. (Author)
Format:	Article
Language:	English
Published:	American Institute of Physics Inc. 2022
Subjects:	1/F noise 1/f-noise Drain current Drain-to-source voltages Fin field-effect transistors FinFET Gallium compounds Leakage currents Low-leakage current On-off ratio Performance Si substrates Sub-threshold swing(ss) β -Ga2O3
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Single β -Ga2O3nanowire based lateral FinFET on Si

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