Single β -Ga2O3nanowire based lateral FinFET on Si
A fin field-effect transistor (FinFET) based on single β-Ga2O3 nanowire with a diameter of ∼60 nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of ∼4 × 108, a system-limit l...
Main Authors: | , , , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
American Institute of Physics Inc.
2022
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Subjects: | |
Online Access: | View Fulltext in Publisher |
Summary: | A fin field-effect transistor (FinFET) based on single β-Ga2O3 nanowire with a diameter of ∼60 nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of ∼4 × 108, a system-limit low leakage current (∼4 fA), and a relatively low subthreshold swing (∼110 mV). Simulation shows that the channel of the FinFET depletes much faster than that of the back-gate FET with negative gate bias, which is consistent with the measurement results. Moreover, trap-related 1/f noise and 1/f2 noise have been identified according to low frequency noise analysis, and a carrier number fluctuation is expected to be the dominant 1/f noise mechanism in the β-Ga2O3 FinFET in this work. © 2022 Author(s). |
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ISBN: | 00036951 (ISSN) |
DOI: | 10.1063/5.0086909 |