Single β -Ga2O3nanowire based lateral FinFET on Si

• Main Authors: Jia, C. (Author), Lee, Y.J (Author), Li, J. (Author), Liu, L. (Author), Ma, Y. (Author), Park, J.-H (Author), Qu, G. (Author), Wang, G. (Author), Wang, Y. (Author), Wu, S. (Author), Xu, S. (Author), Yi, X. (Author), Zhang, X. (Author), Zhang, Y. (Author)
• Format: Article
• Language: English
• Published: American Institute of Physics Inc. 2022
• Subjects: 1/F noise; 1/f-noise; Drain current; Drain-to-source voltages; Fin field-effect transistors; FinFET; Gallium compounds; Leakage currents; Low-leakage current; On-off ratio; Performance; Si substrates; Sub-threshold swing(ss); β -Ga2O3
• Online Access: View Fulltext in Publisher

 A fin field-effect transistor (FinFET) based on single β-Ga2O3 nanowire with a diameter of ∼60 nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of ∼4 × 108, a system-limit low leakage current (∼4 fA), and a relatively low subthreshold swing (∼110 mV). Simulation shows that the channel of the FinFET depletes much faster than that of the back-gate FET with negative gate bias, which is consistent with the measurement results. Moreover, trap-related 1/f noise and 1/f2 noise have been identified according to low frequency noise analysis, and a carrier number fluctuation is expected to be the dominant 1/f noise mechanism in the β-Ga2O3 FinFET in this work. © 2022 Author(s).