Memristor compact model with oxygen vacancy concentrations as state variables
We present a unique compact model for oxide memristors based upon the concentration of oxygen vacancies as state variables. In this model, the increase (decrease) in oxygen vacancy concentration is similar in effect to the reduction (expansion) of the tunnel gap used as a state variable in existing...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics Inc.
2022
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| Subjects: | |
| Online Access: | View Fulltext in Publisher |