Atomic layer-by-layer etching of graphene directly grown on SrTiO3substrates for high-yield remote epitaxy and lift-off

Atomic layer-by-layer etching of graphene directly grown on SrTiO3substrates for high-yield remote epitaxy and lift-off

Epitaxial lift-off techniques, which aim to separate ultrathin single-crystalline epitaxial layers off of the substrate, are becoming increasingly important due to the need of lightweight and flexible devices for heterogeneously integrated ultracompact semiconductor platforms and bioelectronics. Rem...

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Bibliographic Details
Main Authors:	Chen, P. (Author), Ji, J. (Author), Kang, J.E (Author), Kim, J. (Author), Kim, K.S (Author), Kim, S. (Author), Kum, H.S (Author), Yeom, G.Y (Author)
Format:	Article
Language:	English
Published:	American Institute of Physics Inc. 2022
Subjects:	Atomic layer Atomic layer etching Atoms Epitaxial lift-off techniques Etching Graphene Graphene layers Higher yield Layer by layer Lift offs Semiconductor devices Single crystalline substrates Single crystals Single-crystalline Strontium titanates Substrates Titanium compounds Ultra-thin Ultrathin films
Online Access:	View Fulltext in Publisher

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