Applications of the image processing method on the structure measurements in porous GaN

Porous GaN films on sapphire (0001) prepared by ultraviolet-assisted electrochemical etching and their quantitative structural characteristics based on mathematical morphology analysis using scanning electron microscope (SEM) images are reported in this study. The evaluation of porous GaN quality ca...

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Bibliographic Details
Main Authors:	Bukhari Md Yunus, M. (Author), Fong Kwong, Y. (Author), Hassan, Z. (Author), Lee Siang, C. (Author), Mahmood, A. (Author), Mahmoud Ahmed, N. (Author)
Format:	Article
Language:	English
Subjects:	algorithm article computer program Fabrication process gallium nitrate Gallium nitride image analysis Image analysis techniques image processing Image processing Image processing - methods imaging techniques Imaging techniques Mathematical morphology MATLAB nanostructure Nanostructures porosity porous GaN priority journal Quality control Quantitative information Sapphire scanning electron microscope Scanning electron microscopy semiconductor Structural characteristics Structure measurement Ultraviolet-assisted
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Applications of the image processing method on the structure measurements in porous GaN

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