Enhancing Performance of Porous Si-Doped GaN Based MSM Photodetector Using 50 Hz ACPEC
In this work, we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The formation of porous Si-doped GaN by the novel ACPEC is performed in the same electrolyte concentration (4% KOH)...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Institute of Physics Publishing,
2020
|
| Subjects: | |
| Online Access: | View Fulltext in Publisher View in Scopus |