Comparative Studies between Porous Silicon and Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique

Comparative Studies between Porous Silicon and Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique

Porous n-type Si and porous p-type GaN nanostructures were fabricated using alternating current photo-assisted electrochemical (ACPEC) etching in 1:4 volume ratio of hydrofluoric acid (HF) and ethanol (C2H5OH) for a duration of 30 min. The proposed approach to this work was to study pore formation o...

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Bibliographic Details
Main Authors: Abdullah M. (Author), Ahmed, N.M (Author), Hassan, Z. (Author), Lim, W.F (Author), Quah, H.J (Author), Radzali, R. (Author), Sohimee, S.N (Author)
Format: Article
Language:English
Published: Institute of Physics Publishing, 2020
Subjects:
Alternating current
Catalyst selectivity
Comparative studies
Crystal atomic structure
Different substrates
Electric impedance measurement
Electrochemical etching
Energy dispersive spectroscopy
Energy dispersive X ray spectroscopy
Field emission microscopes
Field emission scanning electron microscopy
Gallium nitride
High-resolution x-ray diffraction
Hydrofluoric acid
III-V semiconductors
Nanostructures
Photo assisted electrochemical etching
Pore size
Porous nanostructures
Porous silicon
Scanning electron microscopy
Semiconductor quantum wells
Substrates
Surface roughness
Wide band gap semiconductors
X ray diffraction analysis
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