Comparative Studies between Porous Silicon and Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique
Porous n-type Si and porous p-type GaN nanostructures were fabricated using alternating current photo-assisted electrochemical (ACPEC) etching in 1:4 volume ratio of hydrofluoric acid (HF) and ethanol (C2H5OH) for a duration of 30 min. The proposed approach to this work was to study pore formation o...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Institute of Physics Publishing,
2020
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Subjects: | |
Online Access: | View Fulltext in Publisher View in Scopus |