Fabrication of Flexible Au/ZnO/ITO/PET Memristor Using Dilute Electrodeposition Method

Fabrication of Flexible Au/ZnO/ITO/PET Memristor Using Dilute Electrodeposition Method

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DRAM has been approaching its maximum physical limit due to the demand of smaller size and higher capacity memory resistor. The researchers have discovered the abilities of a memristor, a Non Volatile Memory (NVM) that could overcome the size and capacity obstacles. This paper discussed about the de...

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Bibliographic Details
Main Authors: Ani, M.H (Author), Azhar, A.Z.A (Author), Fauzi, F.B (Author), Herman S.H (Author), Herman, S.H (Author), Mohamed, M.A (Author), Othman, R. (Author)
Format: Article
Language:English
Published: Institute of Physics Publishing 2015
Subjects:
Data storage equipment
Deposition
Digital storage
Dynamic random access storage
Electrodeposition
Electrodeposition methods
Electrodes
Electronic equipment
Field emission microscopes
Field emission scanning electron microscopy
Flexible substrate
Hysteresis
Hysteresis loops
Indium tin oxide
I-V measurements
Memristors
Non-volatile memory
Passive filters
Plastic bottles
Polyethylene terephthalates (PET)
Resistive switching
Scanning electron microscopy
Substrates
Thermoelectric equipment
Tin oxides
X ray diffraction
Zinc
Zinc chloride
Zinc oxide
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