Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET

Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET

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A study of the NBTI reliability of high-k p-MOSFET device for application in subthreshold operation based on different defect mechanism is presented. The impact of the different defect mechanism is studied based on modelling the sub-threshold operation using Two-Stage NBTI model and NBTI-induced pos...

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Bibliographic Details
Main Authors: Bukhori, M.F (Author), Herman S.H (Author), Hussin, H. (Author), Muhamad Hatta, S.W (Author), Soin, N. (Author)
Format: Article
Language:English
Published: Institute of Physics Publishing 2015
Subjects:
Defect mechanisms
Defects
Electronic equipment
Energy profiling approach
Integrated circuits
MOSFET devices
Positive charges
Subthreshold operation
Temperature dependence
Temperature distribution
Thermally activated
Thermoelectric equipment
Threshold elements
Threshold voltage
Threshold voltage shifts
Time exponent
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