Impact of different NBTI defect components on sub-threshold operation of high-k p-MOSFET
A study of the NBTI reliability of high-k p-MOSFET device for application in subthreshold operation based on different defect mechanism is presented. The impact of the different defect mechanism is studied based on modelling the sub-threshold operation using Two-Stage NBTI model and NBTI-induced pos...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Physics Publishing
2015
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| Subjects: | |
| Online Access: | View Fulltext in Publisher View in Scopus |