The Effect of the Sol-gel Spincoating Deposition Technique on the Memristive Behaviour of ZnO-based Memristive Device

The Effect of the Sol-gel Spincoating Deposition Technique on the Memristive Behaviour of ZnO-based Memristive Device

Show other versions (1)

This paper presents the memristive behavior of zinc oxide thin films deposited on ITO substrate by sol-gel spin coating technique. The spin coating speed was varied from 1000 rpm to 5000 rpm to study the effect it has on the memristive device fabricated. The electrical properties were characterized...

Full description

Bibliographic Details
Main Authors: Herman S.H (Author), Herman, S.H (Author), Kasim, S.M.M (Author), Sauki, N.S.M (Author), Shaari, N.A.A (Author)
Format: Article
Language:English
Published: Institute of Physics Publishing 2015
Subjects:
Coatings
Electron devices
Electronic equipment
Film thickness
Measurement system
memristive
Memristive behavior
Memristors
Oxide films
resistance ratio
Resistance ratio
Sol-gel process
Sol-gel spin coating
Sol-gels
speed
Speed
spin coat
Spin coating
Spin-coating deposition
Switching behaviors
Thermoelectric equipment
Thin films
Zinc
Zinc coatings
Zinc oxide
Zinc oxide thin films
ZnO
Online Access:View Fulltext in Publisher
View in Scopus

Internet

View Fulltext in Publisher
View in Scopus

Similar Items